UPA1840 Datasheet, PDF (1/8 Pages) NEC – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1840
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA1840 is N-channel MOS FET device that
features a low on-state resistance and excellent
switching characteristics, and designed for high voltage
applications such as DC/DC converter.
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1840GR-9JG
Power TSSOP8
FEATURES
• High voltage rating VDSS = 200 V
• Power TSSOP8 package (Single circuit)
• Gate voltage rating ±30 V
• Low on-state resistance
RDS(on) = 0.5 Ω MAX. (VGS = 10 V, ID = 1.5 A)
• Low input capacitance
Ciss = 320 pF TYP. (VDS = 10 V, VGS = 0 V)
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
200
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
Total Power Dissipation ^Note2
ID(DC)
±2.2
A
ID(pulse)
±8.8
A
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on ceramic substrate of 5000mm² x 1.1
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G14758EJ1V0DS00 (1st edition)
Date Published November 2001 NS CP(K)
©
Printed in Japan
2000