UPA1790 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-AND P-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ ^PA1790
SWITCHING
N-AND P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-and P-Channel MOS Field Effect Transistor
designed for motor driver applications.
FEATURES
• Dual chip type
• Low on-resistance
N-Channel RDS(on)1 = 0.12 Ω TYP. (VGS = 10 V, ID = 0.5 A)
RDS(on)2 = 0.19 Ω TYP. (VGS = 4 V, ID = 0.5 A)
P-Channel RDS(on)1 = 0.45 Ω TYP. (VGS = –10 V, ID = –0.35 A)
RDS(on)2 = 0.74 Ω TYP. (VGS = –4 V, ID = –0.35 A)
• Low input capacitance
N-Channel Ciss = 180 pF TYP.
P-Channel Ciss = 230 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1790G
Power SOP8
Gate
PACKAGE DRAWING (Unit : mm)
8
5
1
4
5.37 MAX.
N-Channel
1 ; Source 1
2 ; Gate 1
7,8 ; Drain 1
P-Channel
3 ; Source 2
4 ; Gate 2
5,6 ; Drain 2
6.0 ±0.3
4.4
0.8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
EQUIVARENT CIRCUIT
Drain
Drain
Body
Diode
Gate
Body
Diode
Gate
Protection
Diode
Source
N-Channel
Gate
Protection
Diode
Source
P-Channel
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G14320EJ1V0DS00 (1st edition)
Date Published May 1999 NS CP(K)
©
Printed in Japan
1999