UPA1759 Datasheet, PDF (1/4 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ ^PA1759
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is Dual N-channel MOS Field Effect
Transistor designed for DC/DC converters.
FEATURES
• Dual chip type
• Low on-resistance
RDS(on)1 = 110 mΩ TYP. (VGS = 10 V, ID = 2.5 A)
RDS(on)2 = 170 mΩ TYP. (VGS = 4 V, ID = 2.5 A)
• Low input capacitance Ciss = 190 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
µPA1759G
PACKAGE
Power SOP8
PACKAGE DRAWING (Unit : mm)
8
5
1
4
5.37 Max.
1 ; Source 1
2 ; Gate 1
7, 8 ; Drain 1
3 ; Source 2
4 ; Gate 2
5, 6 ; Drain 2
6.0 ±0.3
4.4
0.8
1.27 0.78 Max.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, All terminals are connected.)
Drain to Source Voltage (VGS = 0)
VDSS
60
V
Gate to Source Voltage (VDS = 0)
VGSS
±20
V
Drain Current (DC)
Drain Current (pulse) ^Note1
Total Power Dissipation (1 unit) ^Note2
Total Power Dissipation (2 unit) ^Note2
ID(DC)
±5.0
A
ID(pulse)
±20
A
PT
1.7
W
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current ^Note3
Single Avalanche Energy ^Note3
Tstg –55 to + 150 °C
IAS
2.5
A
EAS
0.625
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Mounted on ceramic substrate of 1200 mm² x 1.7 mm
3. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
EQUIVALENT CIRCUIT
(1/2 Circuit)
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G13622EJ1V0DS00 (1st edition)
Date Published May 1999 NS CP(K)
©
Printed in Japan
1999