UPA1758 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ^PA1758
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of
notebook computers, and Li-ion battery application.
FEATURES
• Dual MOS FET chips in small package
• 2.5 V gate drive type low on-state resistance
RDS(on)1 = 30 mΩ (MAX.) (VGS = 4.5 V, ID = 3.0 A)
RDS(on)2 = 40 mΩ (MAX.) (VGS = 2.5 V, ID = 3.0 A)
• Low Ciss : Ciss = 1100 pF (TYP.)
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1758G
Power SOP8
PACKAGE DRAWING (Unit : mm)
8
5
1
4
5.37 Max.
1 ; Source 1
2 ; Gate 1
7, 8 ; Drain 1
3 ; Source 2
4 ; Gate 2
5, 6 ; Drain 2
6.0 ±0.3
4.4
0.8
1.27 0.78 Max.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0)
VDSS
30
V
Gate to Source Voltage (VDS = 0)
VGSS
±12.0
V
Drain Current (DC)
Drain Current (Pulse) ^Note1
Total Power Dissipation (1 unit) ^Note2
Total Power Dissipation (2 unit) ^Note2
ID(DC)
±6.0
A
ID(pulse)
±24
A
PT
1.7
W
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg –55 to + 150 °C
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Mounted on ceramic substrate of 2000 mm² x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice.
Document No. D12911EJ1V0DS00 (1st edition)
Date Published October 1998 NS CP(K)
Printed in Japan
©
1998