UPA1756 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ ^PA1756
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is Dual N-Channel MOS Field Effect
Transistor designed for power management
application of notebook computers, and Li-ion
battery application.
FEATURES
• Dual MOS FET chips in small package
• 2.5-V gate drive type and low on-resistance
RDS(on)1 = 30 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)
RDS(on)2 = 40 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A)
• Low Ciss Ciss = 800 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
µ PA1756G
PACKAGE
Power SOP8
PACKAGE DRAWING (Unit : mm)
8
5
1
4
5.37 Max.
1 ; Source 1
2 ; Gate 1
7, 8 ; Drain 1
3 ; Source 2
4 ; Gate 2
5, 6 ; Drain 2
6.0 ±0.3
4.4
1.27 0.78 Max.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.8
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±12.0
V
Drain Current (DC)
ID(DC)
±6.0
A
Drain Current (Pulse)^Note1
ID(pulse)
±24
A
Total Power Dissipation (1 unit)^Note2
PT
1.7
W
Total Power Dissipation (2 unit)^Note2
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150 °C
Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1 %
2. TA = 25 °C, Mounted on ceramic substrate of 2000 mm² x 1.1 mm
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may
be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D12909EJ1V0DS00 (1st edition)
©
Date Published February 1999 NS CP (K)
Printed in Japan
1999