UPA1731 Datasheet, PDF (1/8 Pages) NEC – SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ^PA1731
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The µPA1731 is P-Channel MOS Field Effect Transistor
designed for power management applications of
notebook computers and Li-ion battery protection circuit.
FEATURES
• Low on-resistance
RDS(on)1 = 10.3 mΩ TYP. (VGS = –10 V, ID = –5.0 A)
RDS(on)2 = 14.6 mΩ TYP. (VGS = –4.5 V, ID = –5.0 A)
•
RDS(on)3 = 16.5 mΩ TYP. (VGS = –4.0 V, ID = –5.0 A)
• ^{• Low Ciss : Ciss =2600 pF TYP.}
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
PACKAGE DRAWING (Unit : mm)
8
5
1,2,3 ; Source
4
; Gate
5,6,7,8 ; Drain
1
4
5.37 MAX.
6.0 ±0.3
4.4
0.8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1731G
Power SOP8
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
–30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
# 20
V
Drain Current (DC)
ID(DC)
# 10
A
Drain Current (pulse) ^Note1
ID(pulse)
# 40
A
Total Power Dissipation (TA = 25°C) ^Note2
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg –55 to + 150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on ceramic substrate of 1200 mm² x 2.2 mm
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G14285EJ1V0DS00 (1st edition)
Date Published October 1999 NS CP(K)
The mark • shows major revised points.
©
Printed in Japan
1999