UPA1725 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ ^PA1725
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This µPA1725 is N-Channel MOS Field Effect Transistor
designed for power management applications of
notebook computers and so on.
FEATURES
• 2.5-V gate drive and low on-resistance
• ^{RDS(on)1 = 21.0 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A)}
• ^{RDS(on)2 = 22.0 mΩ MAX. (VGS = 4.0 V, ID = 3.5 A)}
• ^{RDS(on)3 = 30.0 mΩ MAX. (VGS = 2.5 V, ID = 3.5 A)}
• Low Ciss : Ciss = 950 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1725G
Power SOP8
PACKAGE DRAWING (Unit : mm)
8
5
1,
; Non connection
2,3 ; Source
4
; Gate
5,6,7,8 ; Drain
1
4
5.37 MAX.
6.0 ±0.3
4.4
0.8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
VDSS
20
V
VGSS
±12
V
EQUIVALENT CIRCUIT
Drain Current (DC)
ID(DC)
±7
A
Drain Current (pulse) ^Note1
ID(pulse)
±28
A
Total Power Dissipation (TA = 25°C) ^Note2
PT
2.0
W
Channel Temperature
Tch
150
°C
Gate
Drain
Body
Diode
Storage Temperature
Tstg –55 to + 150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on ceramic substrate of 1200 mm² x 2.2mm
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G14049EJ1V0DS00 (1st edition) The mark _• shows major revised points.
©
Date Published January 2000 NS CP(K)
Printed in Japan
1999, 2000