UPA1709 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ ^PA1709
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management
switch.
FEATURES
• Low on-resistance
RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A)
RDS(on)2 = 13.8 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A)
• Low Ciss : Ciss = 1850 pF (TYP.)
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µ PA1709G
Power SOP8
PACKAGE DRAWING (Unit : mm)
8
5
1
4
5.37 Max.
1,2,3 ; Source
4
; Gate
5,6,7,8 ; Drain
6.0 ±0.3
4.4
1.27 0.78 Max.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.8
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±25
V
Drain Current (DC)
ID(DC)
±9.0
A
Drain Current (pulse) ^Note1
ID(pulse)
±36
A
Total Power Dissipation (TA = 25°C) ^Note2
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to + 150
°C
Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1 %
2. Mounted on ceramic substrate of 1200 mm² x 0.7 mm
EQUIVARENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Document No. G13436EJ1V0DS00 (1st edition)
Date Published November 1998 NS CP(K)
Printed in Japan
©
1998