UPA1706TP Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1706TP
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The µPA1706TP which has a heat spreader is N-Channel
MOS Field Effect Transistor designed for DC/DC converter
and power management application of notebook computer.
FEATURES
• Low on-state resistance
RDS(on)1 = 7.8 mΩ MAX. (VGS = 10 V, ID = 7.0 A)
RDS(on)2 = 10.0 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A)
• Low Ciss: Ciss = 3000 pF TYP. (VDS = 10 V, VGS = 0 V)
• Small and surface mount package (Power HSOP8)
ORDERING INFORMATION
PART NUMBER
µPA1706TP
PACKAGE
Power HSOP8
PACKAGE DRAWING (Unit: mm)
8
5
1, 2, 3
; Source
4
; Gate
5, 6, 7, 8, 9 ; Drain
1
4
5.2
+0.17
–0.2
0.8 ±0.2
S
6.0 ±0.3
4.4 ±0.15
1.27 TYP.
0.40
+0.10
–0.05
1
4
0.12 M
2.0 ±0.2
9
4.1 MAX.
8
5
0.10 S
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (DC) ^Note1
Drain Current (pulse) ^Note2
ID(DC)1
±28
A
ID(DC)2
±17
A
ID(pulse)
±100
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation ^Note1
PT1
39
W
PT2
3
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current ^Note3
Single Avalanche Energy ^Note3
Tstg –55 to + 150 °C
IAS
19
A
EAS
36.1
mJ
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec
2. PW ≤ 10 µs, Duty cycle ≤ 1%
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15850EJ1V0DS00 (1st edition)
©
Date Published May 2002 NS CP(K)
Printed in Japan
2001