UPA1700A Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
µPA1700A
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect
Transistor designed for DC/DC converters and power
management of notebook computers.
FEATURES
• Low On-Resistance
RDS(on)1 = 27 mΩ Max. (VGS = 10 V, ID = 3.5 A)
RDS(on)2 = 50 mΩ Max. (VGS = 4 V, ID = 3.5 A)
• Low Input Capacitance
Ciss = 820 pF Typ.
• Built-in G-S Protection Diode
• Small and Surface Mount Package
(Power SOP8)
PACKAGE DIMENSIONS
(in millimeter)
8
5
1
4
5.37 MAX.
1, 2, 3 ; Source
4
; Gate
5, 6, 7, 8; Drain
6.0 ±0.3
4.4
0.8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C, all terminals are connected)
Drain to Source Voltage
VDSS
30
V
Drain
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
Drain Current (pulse)^{Note 1}
ID(DC)
ID(pulse)
±7.0
±28
A
A
Gate
Body
Diode
Total Power Dissipation (TA = 25 °C)^{Note 2}
PT
2.0
W
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg
–55 to +150
˚C
Gate
Protection
Diode ^Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on ceramic substrate of 1200 mm² × 1.7 mm
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device acutally used, an additional protection circuit is externally required if voltage exceeding the rated voltage may
be applied to this device.
The information in this document is subject to change without notice.
Document No. G12008EJ1V0DS00 (1st edition)
Date Published April 1997 N
Printed in Japan
©
1996