UPA1572B Datasheet, PDF (1/8 Pages) NEC – N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE

DATA SHEET
Compound Field Effect Power Transistor
µPA1572B
N-CHANNEL POWER MOS FET ARRAY
SWITCHING
INDUSTRIAL USE
DESCRIPTION
The µPA1572B is N-channel Power MOS FET Array
that built in 4 circuits designed for solenoid, motor and
lamp driver.
FEATURES
• Full Mold Package with 4 Circuits
• 4 V driving is possible
• Low On-state Resistance
RDS(on) = 0.6 Ω MAX. (VGS = 10 V, ID = 1 A)
RDS(on) = 0.8 Ω MAX. (VGS = 4 V, ID = 1 A)
• Low Input Capacitance Ciss = 110 pF TYP.
ORDERING INFORMATION
Type Number
Package
µPA1572BH
10Pin SIP
PACKAGE DIMENSIONS
in millimeters
26.8 MAX.
4.0
2.54
1.4 0.6±0.1
1.4
0.5±0.1
1 2 3 4 5 6 7 8 910
CONNECTION DIAGRAM
3
5
7
9
2
4
6
8
1
10
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0) VDSS
60 V
Gate to Source Voltage (VDS = 0) VGSS (AC) ±20 V
Drain Current (DC)
ID (DS)
±2.0 A/unit
Drain Current (pulse)
ID (pulse) *1 ±6.0 A/unit
Total Power Dissipation
PT1 *2
20 W
Total Power Dissipation
PT2 *3
3.0 W
Channel Temperature
TCH
150 °C
Storage Tempreature
Tstg
−55 to +150°C
Single Avalanche Current
IAS *4
5.0 A
Single Avalanche Energy
EAS *4
0.1 mJ
ELECTRODE CONNECTION
2, 4, 6, 8 : Gate
3, 5, 7, 9 : Drain
1, 10 : Source
*1 PW ≤ 10 µs, Duty Cycle ≤ 1 % *2 4 Circuits TC = 25 °C
*3 4 Circuits TA = 25 °C
*4 Starting TCH = 25 °C, VDD = 30 V, VGS = 20 V → 0, RG = 25 Ω, L = 100 µH
Build-in Gate Diodes are for protection from static electricity in handing.
In case high voltage over VGSs is applied, please append gate protection circuits.
The information in this document is subject to change without notice.
Document No. G11177EJ1V0DS00 (1st edition)
Date Published May 1996 P
Printed in Japan
©
1996