UPA1560 Datasheet, PDF (1/4 Pages) NEC – N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE

DATA SHEET
COMPOUND FIELD EFFECT POWER TRANSISTOR
µ ^PA1560
N-CHANNEL POWER MOS FET ARRAY
SWITCHING
INDUSTRIAL USE
DESCRIPTION
The µPA1560 is N-Channel Power MOS FET Array
that built in 4 circuits designed for solenoid, motor and
lamp driver.
PACKAGE DRAWING (Unit : mm)
26.8 MAX.
4.0
FEATURES
• Full mold package with 4 circuits
• 4 V driving is possible
• Low on-state resistance
RDS(on)1 = 165 mΩ MAX. (VGS = 10 V, ID = 1.5 A)
RDS(on)2 = 200 mΩ MAX. (VGS = 4 V, ID = 1.5 A)
• Low input capacitance
Ciss = 600 pF TYP.
2.54
1.4 0.6±0.1
1.4
0.5±0.1
1 2 3 4 5 6 7 8 910
EQUIVALENT CIRCUIT
ORDERING INFORMATION
3
5
7
9
PART NUMBER
PACKAGE
2
4
6
8
µ PA1560H
10-pin SIP
1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
120
V
10
ELECTRODE CONNECTION
2, 4, 6, 8 : Gate
3, 5, 7, 9 : Drain
1, 10 : Source
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
±20
V
Gate to Source Voltage (VDS = 0 V)
VGSS(DC) + 20, –10
V
Drain Current (DC)
Drain Current (pulse) ^Note1
ID(DC)
±3.0
A
ID(pulse)
±12
A
Total Power Dissipation (TC = 25°C)
PT1
28
W
Total Power Dissipation (TA = 25°C)
PT2
3.7
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current ^Note2
Single Avalanche Energy ^Note2
Tstg –55 to + 150 °C
IAS
3.0
A
EAS
0.9
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Starting Tch = 25 °C, VDD = 60 V, RG = 25 Ω, VGS = 20 V ¡ 0 V
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G14283EJ1V0DS00 (1st edition)
Date Published April 1999 NS CP(K)
Printed in Japan
©
1999