UPA1552B Datasheet, PDF (1/8 Pages) NEC – N-CHANNEL POWER MOS FET ARRAY SWITCHING USE

DATA SHEET
COMPOUND FIELD EFFECT POWER TRANSISTOR
µPA1552B
N-CHANNEL POWER MOS FET ARRAY
SWITCHING USE
DESCRIPTION
The µPA1552B is N-channel Power MOS FET Array
that built in 4 circuits designed, for solenoid, motor and
lamp driver.
PACKAGE DIMENSIONS
in millimeters
26.8 MAX.
4.0
FEATURES
• 4 V driving is possible
• Large Current and Low On-state Resistance
ID(DC) = ±5.0 A
RDS(on)1 ≤ 0.18 Ω MAX. (VGS = 10 V, ID = 3 A)
RDS(on)2 ≤ 0.24 Ω MAX. (VGS = 4 V, ID = 3 A)
• Low Input Capacitance Ciss = 200 pF TYP.
ORDERING INFORMATION
Type Number
µPA1552BH
Package
10 Pin SIP
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDSS ^{Note 1}
60
Gate to Source Voltage
VGSS ^{Note 2}
±20
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Total Power Dissipation
ID(DC)
ID(pulse) ^{Note 3}
PT1 ^{Note 4}
PT2 ^{Note 5}
±5.0
±20
28
3.5
Channel Temperature
TCH
150
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Tstg
IAS ^{Note 6}
EAS ^{Note 6}
–55 to +150
5.0
2.5
V
V
A/unit
A/unit
W
W
˚C
˚C
A
mJ
2.54
1.4 0.6±0.1
1.4
0.5±0.1
1 2 3 4 5 6 7 8 910
CONNECTION DIAGRAM
3
5
7
9
2
4
6
8
1
10
ELECTRODE CONNECTION
2, 4, 6, 8 : Gate
3, 5, 7, 9 : Drain
1, 10 : Source
Notes 1. VGS = 0
3. PW ≤ 10 µs, Duty Cycle ≤ 1 %
5. 4 Circuits, TA = 25 ˚C
2. VDS = 0
4. 4 Circuits, TC = 25 ˚C
6. Starting TCH = 25 ˚C, V DD = 30 V, VGS = 20 V → 0,
RG = 25 Ω, L = 100 µH
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
Document No. G10599EJ2V0DS00 (2nd edition)
Date Published December 1995 P
Printed in Japan
©
1995