UPA1550 Datasheet, PDF (1/6 Pages) NEC – COMPOUND FIELD EFFECT TRANSISTOR ARRAY

DATA SHEET
COMPOUND FIELD EFFECT TRANSISTOR ARRAY
µPA1550
N-CHANNEL POWER MOS FET ARRAY
FOR SWITCHING
µPA1550 is a N-channel vertical power MOS FET and this
switching device is available for direct drive by output of 5 V power
supply IC.
This device features low on-resistance and excellent switching
characteristic, and is ideal for control of devices such as mortars,
solenoid, or ramp.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• Gate drive available at logic level (VGS = 4 V)
• High current capacity and low on-resistnace
ID(pulse) = ±20 A
RDS(on) = 0.09 Ω TYP. @VGS = 10 V
RDS(on) = 0.11 Ω TYP. @VGS = 4 V
• Easy to mount the printing board due to 2.54 mm (0.1 inch) interval
of lead pins
• Small dimension and no electrode exposure except lead pins
enable the high density mounting.
ELECTRODE CONNECTION
ORDERING INFORMATION
Part Number
µPA1550H
Package
10-pin SIP
Quality
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended
applications.
2, 4, 6, 8 : Gate (G)
3, 5, 7, 9 : Drain (D)
1, 10 : Source (S)
INTERNAL EQUIVALENT
CIRCUIT
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G16142EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928