UPA1523B Datasheet, PDF (1/8 Pages) NEC – P-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE

DATA SHEET
COMPOUND FIELD EFFECT POWER TRANSISTOR
µPA1523B
P-CHANNEL POWER MOS FET ARRAY
SWITCHING
INDUSTRIAL USE
DESCRIPTION
The µPA1523B is P-channel Power MOS FET Array that built
in 4 circuits designed for solenoid, motor and lamp driver.
FEATURES
• Full Mold Package with 4 Circuits
• –4 V driving is possible
• Low On-state Resistance
RDS(on)1 = 0.8 Ω MAX. (@VGS = –10 V, ID = –1 A)
RDS(on)2 = 1.3 Ω MAX. (@VGS = –4 V, ID = –1 A)
• Low Input Capacitance Ciss = 190 pF TYP.
ORDERING INFORMATION
Type Number
µPA1523BH
Package
10 Pin SIP
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (VGS = 0) VDSS
–60
V
Gate to Source Voltage (VDS = 0) VGSS(AC)
20
V
Drain Current (DC)
ID(DC)
2.0 A/unit
Drain Current (pulse)
ID(pulse) *1 8.0 A/unit
Total Power Dissipation
PT1 *2
28
W
Total Power Dissipation
PT2 *3
3.5
W
Channel Temperature
TCH
150
˚C
Storage Temperature
Tstg
–55 to + 150 ˚C
Single Avalanche Current
IAS *4
–2.0
A
Single Avalanche Energy
EAS *4
0.4
mJ
PACKAGE DIMENSIONS
in millimeters
26.8 MAX.
4.0
2.54
1.4 0.6 ± 0.1
1.4
0.5 ± 0.1
1 2 3 4 5 6 7 8 910
CONNECTION DIAGRAM
3
5
7
9
2
4
6
8
1
10
ELECTRODE CONNECTION
2, 4, 6, 8 : Gate
3, 5, 7, 9 : Drain
1, 10 : Source
*1 PW ≤ 10 µs, Duty Cycle ≤ 1%
*3 4 Circuits, TA = 25 ˚C
*2 4 Circuits, TC = 25 ˚C
*4 Starting TCH = 25 ˚C, VDD = –30 V, VGS = –20 V → 0, RG = 25 Ω,
L = 100 µH
Build-in Gate Diodes are for protection from static electricity in handing.
In case high voltage over VGSS is applied, please append gate protection circuits.
The information in this document is subject to change without notice.
Document No. G11331EJ1V0DS00
Date Published May 1996 P
Printed in Japan
©
1996