UPA1520B Datasheet, PDF (1/8 Pages) NEC – N-CHANNEL POWER MOS FET ARRAY SWITCHING USE

DATA SHEET
Compound Field Effect Power Transistor
µPA1520B
N-CHANNEL POWER MOS FET ARRAY
SWITCHING USE
DESCRIPTION
The µPA1520B is N-channel Power MOS FET Array that
built in 4 circuits designed for solenoid, motor and lamp
driver.
FEATURES
• 4 V driving is possible
• Large Current and Low On-state Resistance
ID (DC) = ±2.0 A
RDS (on) 1 ≤ 0.17 Ω MAX. (VGS = 10 V, ID = 1 A)
RDS (on) 1 ≤ 0.25 Ω MAX. (VGS = 4 V, ID = 1 A)
• Low Input Capacitance Ciss = 220 pF TYP.
ORDERING INFORMATION
PACKAGE DIMENSIONS
in millimeters
26.8 MAX.
4.0
2.54
1.4 0.6±0.1
1 2 3 4 5 6 7 8 910
1.4
0.5±0.1
Type Number
µPA1520BH
Package
10 Pin SIP
CONNECTION DIAGRAM
3
5
7
9
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
2
4
6
8
Drain to Source Voltage VDSS^{Note 1}
30
V
Gate to Source Voltage VGSS^{Note 2}
±20
V
1
10
Drain Current (DC)
ID(DC)
±2.0 A/unit
Drain Current (pulse)
Total Power Dissipation
Total Power Dissipation
Channel Temperature
ID(pulse)^{Note 3}
PT1^{Note 4}
PT2^{Note 5}
TCH
±8.0
28
3.5
150
A/unit
W
W
°C
ELECTRODE CONNECTION
2, 4, 6, 8 : Gate
3, 5, 7, 9 : Drain
1, 10 : Source
Storage Temperature
Tstg
–55 to +150 °C
Notes 1. VGS = 0
3. PW ≤ 10 µs, Duty Cycle ≤ 1 %
3. 4 circuits, TA = 25 °C
2. VDS = 0
4. 4 circuits, TC = 25 °C
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Document No. G10598EJ2V0DS00 (2nd edition)
Date Published December 1995 P
Printed in Japan
©
1995