UPA1478 Datasheet, PDF (1/6 Pages) NEC – NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE

DATA SHEET
SILICON TRANSISTOR ARRAY
µPA1478
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION
The µPA1478 is NPN silicon epitaxial Darlington
Power Transistor Array that built in Surge Absorber and
4 circuits designed for driving solenoid, relay, lamp and
so on.
PACKAGE DIMENSION
(in millimeters)
26.8 MAX.
4.0
FEATURES
• Surge Absorber (Zener Diode) built in.
• Easy mount by 0.1 inch of terminal interval.
• High hFE for Darlington Transistor.
ORDERING INFORMATION
Part Number
µPA1478H
Package
10 Pin SIP
Quality Grade
Standard
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage VCBO
31 ±4
V
Collector to Emitter Voltage VCEO
31 ±4
V
Emitter to Base Voltage
VEBO
7
V
Surge Sustaining Energy ECEO (SUS) 40 mJ/unit
Collector Current (DC)
IC(DC)
±2 A/unit
Collector Current (pulse)
IC(pulse)*
±4
A/unit
Total Power Dissipation
PT1**
3.5
W
Total Power Dissipation
PT2***
28
W
Junction Temperature
TJ
150
˚C
Storage Temperature
Tstg –55 to +150 ˚C
* PW ≤ 300 µs, Duty Cycle ≤ 10 %
** 4 Circuits, Ta = 25 ˚C
*** 4 Circuits, Tc = 25 ˚C
2.54
1.4 0.6 ±0.1
1.4
0.5 ±0.1
1 2 3 4 5 6 7 8 9 10
CONNECTION DIAGRAM
3
5
7
9
2
4
6
8
1
10
(C)
(B)
R1 R2
(E)
PIN No.
2, 4, 6, 8: Base (B)
3, 5, 7, 9: Collector (C)
1, 10 : Emitter (E)
R1 =^.. 10 kΩ
R2 =^.. 500 Ω
The information in this document is subject to change without notice.
Document No. IC-3566
(O.D. No. IC-6634)
Date Published November 1994 P
Printed in Japan
©
1994