UPA1458 Datasheet, PDF (1/6 Pages) NEC – NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE

DATA SHEET
SILICON TRANSISTOR ARRAY
µPA1458
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION
The µPA1458 is NPN silicon epitaxial Darlington
Power Transistor Array that built in Surge Absorber and
4 circuits designed for driving solenoid, relay, lamp and
so on.
PACKAGE DIMENSION
(in millimeters)
26.8 MAX.
4.0
FEATURES
• Surge Absorber (C - B) built in.
• Easy mount by 0.1 inch of terminal interval.
• High hFE for Darlington Transistor.
ORDERING INFORMATION
2.54
1.4 0.6 ±0.1
1.4
0.5 ±0.1
Part Number
µPA1458H
Package
10 Pin SIP
Quality Grade
Standard
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
1 2 3 4 5 6 7 8 9 10
CONNECTION DIAGRAM
3
5
7
9
2
4
6
8
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
1
Collector to Base Voltage
VCBO 60 ±10
V
Collector to Emitter Voltage VCEO 60 ±10 V
Emitter to Base Voltage
VEBO
7
V
Surge Sustaining Energy
ECEO(sus) 25 mJ/unit
Collector Current (DC)
Collector Current (pulse)
IC(DC)
±5
A/unit
(B)
IC(pulse)* ±10 A/unit
Collector Current
ICBS(DC) 5 mA/unit
Base Current (DC)
IB(DC)
0.5 A/unit
Total Power Dissipation
PT1** 3.5
W
Total Power Dissipation
PT2*** 28
W
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg –55 to +150 ˚C
* PW ≤ 300 µs, Duty Cycle ≤ 10 %
** 4 Circuits, Ta = 25 ˚C
*** 4 Circuits, Tc = 25 ˚C
(C)
R1 R2
(E)
10
PIN No.
2, 4, 6, 8: Base (B)
3, 5, 7, 9: Collector (C)
1, 10 : Emitter (E)
R1 =^.. 3.0 kΩ
R2 =^.. 300 Ω
The information in this document is subject to change without notice.
Document No. IC-3523
(O. D. No. IC-6342)
Date Published September 1994 P
Printed in Japan
©
1994