UPA1453 Datasheet, PDF (1/6 Pages) NEC – PNP SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE INDUSTRIAL USE

DATA SHEET
SILICON TRANSISTOR ARRAY
µPA1453
PNP SILICON POWER TRANSISTOR ARRAY
HIGH SPEED SWITCHING USE
INDUSTRIAL USE
DESCRIPTION
The µPA1453 is PNP silicon epitaxial Power Transistor
Array that built in 4 circuits designed for driving solenoid,
relay, lamp and so on.
FEATURES
• Easy mount by 0.1 inch of terminal interval.
• High hFE. Low VCE(sat).
hFE = 100 to 400 (at IC = –2 A)
VCE(sat) = –0.3 V MAX. (at IC = –2 A)
ORDERING INFORMATION
Part Number
µPA1453H
Package
10 Pin SIP
Quality Grade
Standard
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
2
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
1
Collector to Base Voltage
VCBO
–60
V
Collector to Emitter Voltage VCEO –60
V
Emitter to Base Voltage
VEBO
–7
V
Collector Current (DC)
IC(DC)
–5 A/unit
Collector Current (pulse)
IC(pulse)* –10 A/unit
Base Current (DC)
IB(DC)
–1.0 A/unit
Total Power Dissipation
PT1** 3.5
W
Total Power Dissipation
PT2*** 28
W
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg –55 to +150 ˚C
* PW ≤ 300 µs, Duty Cycle ≤ 10 %
** 4 Circuits, Ta = 25 ˚C
*** 4 Circuits, Tc = 25 ˚C
PACKAGE DIMENSION
(in millimeters)
26.8 MAX.
4.0
2.54
1.4 0.6 ±0.1
1.4
0.5 ±0.1
1 2 3 4 5 6 7 8 9 10
CONNECTION DIAGRAM
3
5
7
4
6
8
PIN No.
2, 4, 6, 8: Base (B)
3, 5, 7, 9: Collector (C)
1, 10 : Emitter (E)
9
10
The information in this document is subject to change without notice.
Document No. IC-3519
(O. D. No. IC-6339)
Date Published September 1994 P
Printed in Japan
©
1994