UPA1437 Datasheet, PDF (1/6 Pages) NEC – PNP SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE

DATA SHEET
SILICON TRANSISTOR ARRAY
µPA1437
PNP SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION
The µPA1437 is PNP silicon epitaxial Darlington
Power Transistor Array that built in 4 circuits designed
for driving solenoid, relay, lamp and so on.
FEATURES
• Easy mount by 0.1 inch of terminal interval.
• High hFE for Darlington Transistor.
PACKAGE DIMENSION
(in millimeters)
26.8 MAX.
4.0
ORDERING INFORMATION
Part Number
µPA1437H
Package
10 Pin SIP
Quality Grade
Standard
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Collector to Base Voltage
VCBO –100
V
Collector to Emitter Voltage VCEO –100
V
Emitter to Base Voltage
VEBO
–7
V
Collector Current (DC)
IC(DC)
m3 A/unit
Collector Current (pulse)
IC(pulse)* m6
A/unit
Base Current (DC)
IB(DC)
–0.3 A/unit
Total Power Dissipation
PT1** 3.5
W
Total Power Dissipation
PT2*** 28
W
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg –55 to +150 ˚C
* PW ≤ 300 µs, Duty Cycle ≤ 10 %
** 4 Circuits, Ta = 25 ˚C
*** 4 Circuits, Tc = 25 ˚C
2.54
1.4 0.6 ±0.1
1.4
0.5 ±0.1
1 2 3 4 5 6 7 8 9 10
CONNECTION DIAGRAM
3
5
7
9
2
4
6
8
1
10
(C)
(B)
R1 R2
(E)
PIN No.
2, 4, 6, 8: Base (B)
3, 5, 7, 9: Collector (C)
1, 10 : Emitter (E)
R1 =^.. 8.3 kΩ
R2 =^.. 600 Ω
The information in this document is subject to change without notice.
Document No. IC-3516
Date Published September 1994 P
Printed in Japan
©
1994