UPA1436A Datasheet, PDF (1/6 Pages) NEC – NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE

DATA SHEET
SILICON TRANSISTOR ARRAY
µPA1436A
NPN SILICON POWER TRANSISTOR ARRAY
HIGH SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION
The µPA1436A is NPN silicon epitaxial Darlington
Power Transistor Array that built in 4 circuits designed
for driving solenoid, relay, lamp and so on.
FEATURES
• Easy mount by 0.1 inch of terminal interval.
• High hFE for Darlington Transistor.
• C-E Reverce Diode built in.
• High Speed Switching.
ORDERING INFORMATION
Part Number
µPA1436AH
Package
10 Pin SIP
Quality Grade
Standard
Please refer to “Quality grade on NEC Semiconductor
Device” (Document number IEI-1209) published by NEC
Corporation to know the specification of quality grade on
the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Collector to Base Voltage VCBO
150
V
Collector to Emitter Voltage VCEO
100
V
Emitter to Base Voltage
VEBO
8
V
Collector Current (DC)
IC(DC)
±3 A/unit
Collector Current (pulse)
IC(pulse)* ±5
A/unit
Base Current (DC)
IB(DC)
0.3 A/unit
Total Power Dissipation
PT1**
3.5
W
(Ta = 25 ˚C)
Total Power Dissipation
PT2**
28
W
(Tc = 25 ˚C)
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg –55 to +150 ˚C
* PW ≤ 350 µs, Duty Cycle ≤ 2 %
** 4 Circuits
PACKAGE DIMENSION
(in millimeters)
26.8 MAX.
4.0
2.54
1.4 0.6 ±0.2
1.4
0.5 ±0.2
1 2 3 4 5 6 7 8 910
CONNECTION DIAGRAM
3
5
7
9
2
4
6
8
1
10
(C)
(B)
R1 R2
(E)
PIN NO.
2, 4, 6, 8: Base (B)
3, 5, 7, 9: Collector (C)
1, 10: Emitter (E)
R1 =.. 5 kΩ
R2 =.. 1.3 kΩ
The information in this document is subject to change without notice.
Document No. IC-3482
(O.D. No. IC-8705)
Date Published September 1994 P
Printed in Japan
©
1994