UPA1434 Datasheet, PDF (1/6 Pages) NEC – NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE INDUSTRIAL USE

DATA SHEET
SILICON TRANSISTOR ARRAY
µPA1434
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE
INDUSTRIAL USE
DESCRIPTION
The µPA1434 is NPN silicon epitaxial Power Transistor
Array that built in 4 circuits designed for driving solenoid,
relay, lamp and so on.
FEATURES
• Easy mount by 0.1 inch of terminal interval.
• High hFE. Low VCE(sat).
hFE = 800 to 3200 (at IC = 0.5 A)
VCE(sat) = 0.5 V MAX. (at IC = 2 A)
ORDERING INFORMATION
Part Number
µPA1434H
Package
10 Pin SIP
Quality Grade
Standard
PACKAGE DIMENSION
(in millimeters)
26.8 MAX.
4.0
2.54
1.4 0.6 ±0.1
1 2 3 4 5 6 7 8 910
1.4
0.5 ±0.1
Please refer to “Quality grade on NEC Semiconductor
CONNECTION DIAGRAM
Device” (Document number IEI-1209) published by NEC
Corporation to know the specification of quality grade on
3
5
7
9
the devices and its recommended applications.
2
4
6
8
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
1
10
Collector to Base Voltage VCBO
60
V
Collector to Emitter Voltage VCEO
60
Emitter to Base Voltage
VEBO
7
Collector Current (DC)
IC(DC)
3
Collector Current (pulse)
IC(pulse)*
6
V
V
A/unit
A/unit
PIN NO.
2, 4, 6, 8: Base (B)
3, 5, 7, 9: Collector (C)
1, 10: Emitter (E)
Base Current (DC)
IB(DC)
0.6 A/unit
Total Power Dissipation
PT1**
3.5
W
(Ta = 25 ˚C)
Total Power Dissipation
PT2**
28
W
(Tc = 25 ˚C)
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg –55 to +150 ˚C
* PW ≤ 300 µs, Duty Cycle ≤ 10 %
** 4 Circuits
The information in this document is subject to change without notice.
Document No. IC-3480
Date Published September 1994 P
Printed in Japan
©
1994