UPA1428A Datasheet, PDF (1/6 Pages) NEC – NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE

DATA SHEET
SILICON TRANSISTOR ARRAY
µPA1428A
NPN SILICON POWER TRANSISTOR ARRAY
HIGH SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION
The µPA1428A is NPN silicon epitaxial Darlington Power
Transistor Array that built in Surge Absorber 4 circuits
designed for driving solenoid, relay, lamp and so on.
FEATURES
• Surge Absorber built in.
• Easy mount by 0.1 inch of terminal interval.
• High hFE for Darlington Transistor.
ORDERING INFORMATION
Part Number
µPA1428AH
Package
10 Pin SIP
Quality Grade
Standard
Please refer to “Quality grade on NEC Semiconductor
Device” (Document number IEI-1209) published by NEC
Corporation to know the specification of quality grade on
the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Collector to Base Voltage VCBO 60 ±10 V
Collector to Emitter Voltage VCEO 60 ±10 V
Emitter to Base Voltage
VEBO
8
V
Surge Sustaining Energy ECEO(sus) 30 mJ/unit
Collector Current (DC)
IC(DC)
±2 A/unit
Collector Current (pulse)
IC(pulse)* ±3
A/unit
Base Current (DC)
IB(DC)
0.2 A/unit
Total Power Dissipation
PT1** 3.5
W
Total Power Dissipation
PT2*** 28
W
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg –55 to +150 ˚C
* PW ≤ 350 µs, Duty Cycle ≤ 2 %
** 4 Circuits, Ta = 25 ˚C
*** 4 Cuircuits, Tc = 25 ˚C
PACKAGE DIMENSION
(in millimeters)
26.8 MAX.
4.0
2.54
1.4 0.6 ±0.2
1.4
0.5 ±0.2
1 2 3 4 5 6 7 8 910
CONNECTION DIAGRAM
3
5
7
9
2
4
6
8
1
10
(C)
(B)
R1 R2
(E)
PIN NO.
2, 4, 6, 8: Base (B)
3, 5, 7, 9: Collector (C)
1, 10: Emitter (E)
R1 =.. 10 kΩ
R2 =.. 900 Ω
The information in this document is subject to change without notice.
Document No. IC-3479
(O.D. No. IC-8359)
Date Published September 1994 P
Printed in Japan
©
1994