NX7460LE Datasheet, PDF (1/8 Pages) NEC – 1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DATA SHEET
LASER DIODE
NX7460LE
1 480 nm EDFA APPLICATION
InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE
DESCRIPTION
The NX7460LE is a 1 480 nm pumping laser diode module with optical isolator for an EDFA (Er Doped optical
Fiber Amplifier) that can expand the transmission span and compensate optical losses. It has a strained Multiple
Quantum Well (st-MQW) DC-PBH laser diode that features high output power, high efficiency, and stable
fundamental mode.
FEATURES
• InGaAsP strained MQW DC-PBH laser diode
• High output power
Pf = 120 mW MIN. @ IF = 550 mA CW
• Internal optical isolator, thermoelectric cooler and InGaAs monitor photo diode
• Hermetically sealed 14-pin butterfly package
• Single mode fiber pigtail
• Wide operating temperature range
TC = 0 to +65 °C
15.24
2.54
7
1
8
14
0.5
20.83±0.13
26.04±0.13
29.97±0.25
PACKAGE DIMENSIONS
in millimeters
TOP VIEW
4– φ 2.67
#7
#1
22.3
Case
PD
LD
#8
#14
Optical Fiber (SMF)
Length: 1 m MIN.
PIN CONNECTIONS
Pin No.
Function
1 Cooler Anode
2 Thermistor
3 PD Anode
4 PD Cathode
5 Case Ground
6 NC
7 NC
Pin No.
Function
8 NC
9 NC
10 LD Anode,
Case Ground
11 LD Cathode
12 NC
13 Case Ground
14 Cooler Cathod
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14127EJ2V0DS00 (2nd edition)
The mark • shows major revised points.
Date Published September 1999 NS CP(K)
Printed in Japan
©
1999