NX5323EH Datasheet, PDF (1/7 Pages) NEC – 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE

DATA SHEET
LASER DIODE
NX5323EH
1 310 nm FOR FTTH PON APPLICATION
InGaAsP MQW-FP LASER DIODE
DESCRIPTION
The NX5323EH is a 1 310 nm Multiple Quantum Well (MQW) structured
Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is
designed for application up to 1.25 Gb/s.
APPLICATION
• FTTH PON (B-PON, G-PON, GE-PON 10 km) system
FEATURES
• Optical output power
Po = 13.0 mW
• Low threshold current
lth = 7 mA
• Differential Efficiency
ηd = 0.5 W/A
• Wide operating temperature range TC = −40 to +85°C
• InGaAs monitor PIN-PD
• CAN package
φ 5.6 mm
• Focal point
6.35 mm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PL10741EJ01V0DS (1st edition)
Date Published July 2009 NS
Printed in Japan
2009