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NX5304 Datasheet, PDF (1/5 Pages) NEC – NECs 1310 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE | |||
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DATA SHEET
NEC's 1310 nm InGaAsP MQW-FP
LASER DIODE IN CAN PACKAGE
FOR 155 Mb/s, 622 Mb/s
AND 1.25 Gb/s APPLICATIONS
NX5304
Series
FEATURES
⢠OPTICAL OUTPUT POWER
PO = 5.0 mW
⢠LOW THRESHOLD CURRENT
Ith = 10 mA
⢠HIGH SPEED
tr = 0.3 ns MAX
tf = 0.3 ns MAX
⢠WIDE OPERATING TEMPERATURE RANGE
TC = -40 to +85°C
⢠InGaAs MONITOR PIN-PD
⢠CAN PACKAGE
Ã5.6 mm
⢠FIBER COUPLING POINT
5.8 mm
⢠BASED ON TELCORDIA RELIABILITY
DESCRIPTION
NEC's NX5304 Series is a 1 310 nm Multiple Quantum
Well (MQW) structured Fabry-Perot (FP) laser diodes with
InGaAs monitor PIN-PD. These devices are designed for
156 Mb/s: STM-1 (I-1, S-1.1, L-1.1), 622 Mb/s: STM-4 (I-4, S-
4.1) application and ideal for Synchronous Digital Hierarchy
(SDH) system.
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°C, unless otherwise speciï¬ed)
PART NUMBER
NX5304 SERIES
SYMBOL
Vop
Ith
Pth
ηd
âηd
PARAMETER AND CONDITIONS
Operating Voltage, Po = 5.0 mW, TC = â40 to +85°C
Threshold Current
TC = 85°C
Threshold Output Power, TC = â40 to +85°C, IF = Ith
Differential Efï¬ciency
Temperature Dependence of Differential Efï¬ciency
ηd = 10 log
ηd (@ 85°C)
ηd (@ 25°C)
UNIT
V
mA
µW
W/A
dB
MIN.
0.32
â3.0
TYP.
1.1
10
25
100
0.4
â1.2
MAX.
1.5
15
30
200
λC
âλ/âT
Ï
tr
tf
Im
ID
Ct
γ
Center Wavelength, Po = 5.0 mW, RMS (â20 dB), TC = â40 to +85°C
Temperature Dependence of Center Wavelength, TC = â40 to +85°C
Spectral Width, Po = 5.0 mW, RMS (â20 dB), TC = â40 to +85°C
Rise Time, 10-90%
Fall Time, 90-10%
Monitor Current, VR = 5 V, Po = 5.0 mW
Monitor Dark Current, VR = 5 V
VR = 5 V, TC = â40 to +85°
Monitor PD Terminal Capacitance, VR = 5 V, f = 1 MHz
Tracking Error*1, Im = const. (@ Po = 5.0 mW, TC = 25°C), TC = â40 to +85°C
nm
nm/°C
nm
ns
ns
µA
nA
1 263
200
pF
dB
â1.0
0.4
1.0
0.15
0.15
500
0.1
6
1 360
0.5
2.5
0.3
0.3
800
10
500
20
1.0
Notes continued on next page
California Eastern Laboratories
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