NP82N06PLG Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N06PLG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP82N06PLG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP82N06PLG-E1-AY ^Note
NP82N06PLG-E2-AY ^Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape
800 p/reel
PACKAGE
TO-263 (MP-25ZP)
Note Pb-free (This product does not contain Pb in the external electrode.)
FEATURES
• Super low on-state resistance
RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 41 A)
RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 41 A)
• Low input capacitance
Ciss = 5700 pF TYP.
• Built-in gate protection diode
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
±82
A
ID(pulse)
±270
A
Total Power Dissipation (TC = 25°C)
PT1
143
W
Total Power Dissipation (TA = 25°C)
PT2
1.8
W
Channel Temperature
Tch
175
°C
Storage Temperature
Repetitive Avalanche Current ^Note2
Repetitive Avalanche Energy ^Note2
Tstg
−55 to +175
°C
IAR
37
A
EAR
137
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.05
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18777EJ1V0DS00 (1st edition)
Date Published June 2007 NS
Printed in Japan
2007