NEZ1011-8E Datasheet, PDF (1/12 Pages) NEC – 8W X, Ku-BAND POWER GaAs MESFET

DATA SHEET
N-CHANNEL GaAs MESFET
NEZ1011-8E, NEZ1414-8E
8W X, Ku-BAND POWER GaAs MESFET
DESCRIPTION
The NEZ1011-8E and NEZ1414-8E are power GaAs MESFETs which provide high gain, high efficiency and high
output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
only a 50 Ω external circuit. To reduce thermal resistance the device has a PHS (Plated Heat Sink) structure. The
device incorporates a WSi (tungsten silicide) gate structure for high reliability.
FEATURES
• High Output Power : Po (1 dB) = +39.5 dBm typ.
• High Linear Gain : 6.5 dB typ.
• High Efficiency : 25 % typ.
• Input and Output Internally Matched for Optimum performance
ORDERING INFORMATION
Part Number
NEZ1011-8E
NEZ1414-8E
T-61
Package
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NEZ1011-8E, NEZ1414-8E)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Forward Current
Gate Reverse Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
Ratings
Unit
VDS
15
V
VGS
–7
V
IDS
10
A
IGF
+80
mA
IGR
–80
mA
PT
60
W
Tch
175
°C
Tstg
–65 to +175
°C
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
The information in this document is subject to change without notice.
Document No. P13730EJ1V0DS00 (1st edition)
Date Published September 1998 N CP(K)
Printed in Japan
©
1998