NESG3031M14 Datasheet, PDF (1/3 Pages) NEC – NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

PRELIMINARY DATA SHEET
NEC's NPN SiGe
HIGH FREQUENCY TRANSISTOR
NESG3031M14
FEATURES
• LOW NOISE FIGURE AND HIGH-GAIN
NF = 0.95 dB TYP, Ga = 10 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz
NF = 1.1 dB TYP, Ga = 9.5 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz
• MAXIMUM STABLE POWER GAIN:
MSG = 15.0 dB TYP @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz
• SiGe HBT TECHNOLOGY:
USH3 process, fmax = 110 GHz
• M14 PACKAGE:
4-pin lead-less minimold package
ORDERING INFORMATION
PART NUMBER
QUANTITY
NESG3031M14
NESG3031M14-T3
50 pcs (Non reel)
10 kpcs/reel
SUPPLYING FORM
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 4 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA =+25ºC)
PARAMETER
SYMBOL
RATINGS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
Ptot ^Note
Tj
Tstg
12.0
4.3
1.5
35
150
150
−65 to +150
Note Mounted on 1.08 cm² × 1.0 mm, (t) glass epoxy PCB
UNIT
V
V
V
mA
mW
°C
°C
California Eastern Laboratories