NESG240034 Datasheet, PDF (1/9 Pages) NEC – NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)

DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
NESG240034
NPN SiGe RF TRANSISTOR FOR
UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION
3-PIN POWER MINIMOLD (34 PKG)
FEATURES
• The device is an ideal choice for low noise, low distortion amplification.
NF = 0.7 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz
• PO (1 dB) = 24 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz
• OIP3 = 35.5 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz
• Maximum stable power gain: MSG =11.5 dB TYP. @ VCE = 5 V, IC = 40 mA, f = 1 GHz
• SiGe HBT technology (UHS2) : fT = 10.0 GHz
• This product is improvement of ESD of NESG2xxx series.
• 3-pin power minimold (34 PKG)
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Supplying Form
NESG240034
NESG240034-A
3-pin power minimold 25 pcs
• Magazine case
(34 PKG) (Pb-Free)
(Non reel)
NESG240034-T1 NESG240034-T1-A
1 kpcs/reel • 12 mm wide embossed taping
• Pin 2 (Collector) face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 25 pcs.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PU10769EJ02V0DS (2nd edition)
Date Published November 2009 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2009