NESG220033 Datasheet, PDF (1/8 Pages) NEC – NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
NESG220033
NPN SiGe RF TRANSISTOR FOR
UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION
3-PIN MINIMOLD (33 PKG)
FEATURES
• The device is an ideal choice for low noise, low distortion amplification.
NF = 0.75 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz
• PO (1 dB) = 21.5 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz
• OIP3 = 35 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz
• Maximum stable power gain: MSG =14.0 dB TYP. @ VCE = 5 V, IC = 40 mA, f = 1 GHz
• SiGe HBT technology (UHS2) : fT = 12.5 GHz
• This product is improvement of ESD of NESG2xxx series.
• 3-pin minimold (33 PKG)
ORDERING INFORMATION
Part Number
Order Number
Package
NESG220033
NESG220033-A
3-pin minimold
(33 PKG) (Pb-Free)
NESG220033-T1B NESG220033-T1B-A
Quantity
Supplying Form
50 pcs
(Non reel)
3 kpcs/reel
• 8 mm wide embossed taping
• Pin 3 (Collector) face the perforation side
of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
5.5
V
Collector to Emitter Voltage
VCES
13
V
Collector to Emitter Voltage
VCEO
5.5
V
Base Current ^{Note 1}
IB
36
mA
Collector Current
Total Power Dissipation
IC
P ^{Note 2}
tot
200
480
mA
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Notes 1. Depend on the ESD protect device.
2. Mounted on 3.8 cm × 9.0 cm × 0.8 mm (t) glass epoxy PWB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PU10766EJ03V0DS (3rd edition)
Date Published November 2009 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2009