NESG2031M05 Datasheet, PDF (1/12 Pages) NEC – NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

NEC's NPN SiGe
HIGH FREQUENCY TRANSISTOR
NESG2031M05
FEATURES
• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
VCEO = 5 V (Absolute Maximum)
• LOW NOISE FIGURE:
NF = 0.8 dBm at 2 GHz
NF = 1.3 dBm at 5.2 GHz
• HIGH MAXIMUM STABLE GAIN:
MSG = 21.5 dB at 2 GHz
• LOW PROFILE M05 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
M05
DESCRIPTION
NEC's NESG2031M05 is fabricated using NEC s high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise amplifiers,
medium power amplifiers, and oscillators.
NEC slow profile, flat lead style M05 Package provides high
frequency performance for compact wireless designs.
NESG2031M05
M05
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
NF
Ga
NF
Ga
MSG
|S21E|²
P1dB
OIP3
fT
Cre
ICBO
IEBO
hFE
Noise Figure at VCE = 2 V, IC = 5 mA, f = 5.2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Associated Gain at VCE = 2 V, IC = 5 mA, f = 5.2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Associated Gain at VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Maximum Stable Gain¹ at VCE = 3 V, IC = 20 mA, f = 2 GHz
Insertion Power Gain at VCE = 3 V, IC = 20 mA, f = 2 GHz
Output Power at 1dB Compression Point at
VCE = 3 V, IC = 20 mA, f = 2 GHz
Output 3rd Order Intercept Point at VCE = 3 V, IC = 20 mA, f = 2 GHz
Gain Bandwidth Product at VCE = 3 V, IC = 20 mA, f = 2 GHz
Reverse Transfer Capacitance² at VCB = 2 V, IC = 0 mA, f = 1 GHz
Collector Cutoff Current at VCB = 5V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
DC Current Gain³ at VCE = 2 V, IC = 5 mA
dB
dB
dB
dB
dB
dB
dBm
dBm
GHz
pF
nA
nA
15.0
19.0
16.0
20
130
1.3
10.0
0.8
1.1
17.0
21.5
18.0
13
23
25
0.15
0.25
100
100
190
260
Notes:
1. MSG = ^S21
S12
2. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to
the guard pin.
3. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
California Eastern Laboratories