NESG2030M04 Datasheet, PDF (1/9 Pages) NEC – NONLINEAR MODEL

NPN SiGe HIGH FREQUENCY TRANSISTOR NESG2030M04
FEATURES
• SiGe TECHNOLOGY:
fT = 60 GHz Process
• LOW NOISE FIGURE:
NF = 0.9 dBm at 2 GHz
• HIGH MAXIMUM STABLE GAIN:
MSG = 20 dB at 2 GHz
• NEW LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
DESCRIPTION
The NESG2030M04 is fabricated using NEC's state-of-the-art
SiGe, wafer process. With a typical transition frequency of
60 GHz the NESG2030M04 is usable in applications from 100
MHz to over 10 GHz. Maximum DC current input of 35 mA
provides a device with a usable current range of 250 µA to 25
mA. The NESG2030M04 provides excellent low voltage/low
current performance.
NEC's new low profile/flat lead style "M04" package is ideal for
today's portable wireless applications. The NESG2030M04 is
an ideal choice for LNA and oscillator requirements in all
mobile communication systems.
M04
ORDERING INFORMATION
PART NUMBER
QUANTITY
NESG2030M04
50 pcs(non reel)
NESG2030M04-T2 3 kpcs/reel
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
ICBO
IEBO
hFE
Cre
NF
Ga
MSG
|S21E|²
P1dB
OIP3
PART NUMBER
EIAJ¹ REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Collector Cutoff Current at VCB = 5V, IE = 0
Emitter Cutoff Current at VEB = 0.5 V, IC = 0
DC Current Gain² at VCE = 2 V, IC = 5 mA
Reverse Transfer Capacitance³ at VCB = 2 V, IE = 0 mA, f = 1 GHz
Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZIN = ZOPT
Associated Gain at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = ZOPT
Maximum Stable Gain⁴ at VCE = 2 V, IC = 20 mA, f = 2 GHz
Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz
Output Power at 1 dB compression point
VCE = 2 V, IC = 20 mA, f = 2 GHz
Third Order Intercept Point, VCE = 2 V, IC = 20 mA, f = 2 GHz
UNITS
nA
nA
pF
dB
GHz
dB
dB
dBm
dBm
NESG2030M04
2SC5761
M04
MIN
TYP
MAX
200
200
200
400
0.17
0.22
0.9
1.1
16
18
20
16
18
12
22
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to
the guard pin.
4. MSG = ^S21
S12
California Eastern Laboratories