NES2427P-60 Datasheet, PDF (1/8 Pages) NEC – 60 W S-BAND PUSH-PULL POWER GaAs MES FET

PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NES2427P-60
60 W S-BAND PUSH-PULL POWER GaAs MES FET
DESCRIPTION
The NES2427P-60 is a 60 W push-pull type GaAs MES FET designed for high power transmitter applications for
MMDS, WLL repeater and base station systems. It is capable of delivering 60 W of output power (CW) with high
linear gain, high efficiency and excellent distortion. Its primary band is 2.4 to 2.7 GHz. The device employs 0.9 µm
Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, thermal
characteristics, and reliability.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• Push-pull type N-channel GaAs MES FET
• VDS = 10.0 V operation
• High output power: PO (1 dB) = 60 W TYP.
• High linear gain: GL = 12.0 dB TYP.
• High power added efficiency: ηadd = 35 % TYP. @ VDS = 10.0 V, IDset = 12.0 A (total), f = 2.50, 2.70 GHz
ORDERING INFORMATION (PLAN)
Part Number
NES2427P-60
Package
T-92
Supplying Form
ESD protective envelope
Remark To order evaluation samples, consult your NEC sales representative.
Caution Please handle this device at static-free workstation, because this is an electrostatic
sensitive device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14997EJ1V0DS00 (1st edition)
Date Published July 2000 NS CP(K)
Printed in Japan
©
2000