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NES1823P-30 Datasheet, PDF (1/8 Pages) NEC – 30 W L-S BAND PUSH-PULL POWER GaAs MES FET
PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NES1823P-30
30 W L-S BAND PUSH-PULL POWER GaAs MES FET
DESCRIPTION
The NES1823P-30 is a 30 W push-pull type GaAs MES FET designed for high power transmitter applications for
PCS, DCS and IMT 2000 base station systems. It is capable of delivering 30 watts of output power (CW) with high linear
gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz, however with different matching, 60
MHz or less of instantaneous bandwidth can be achieved anywhere from 0.8 to 2.3 GHz. The device employs
0.9 µm Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance,
thermal characteristics, and reliability.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• Push-pull type N-channel GaAs MES FET
• High output power
: 30 W TYP.
• High linear gain
: 13 dB TYP.
• High power added efficiency : 40 % TYP. @VDS = 10 V, IDset = 4 A, f = 2.2 GHz
ORDERING INFORMATION (PLAN)
Part Number
Package
NES1823P-30
T-86
Supplying Form
−
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NES1823P-30)
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
15
V
Gate to Source Voltage
VGSO
–7
V
Gate to Drain Voltage
VGDO
–18
V
Drain Current
ID
27
A
Gate Current
IG
180
mA
Total Power Dissipation
PT
90Note
W
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
–65 to +175
°C
Note TC = 25°C
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14491EJ1V0DS00 (1st edition)
Date Published October 1999 N CP(K)
©
Printed in Japan
1999