NES1823P-140 Datasheet, PDF (1/8 Pages) NEC – 140 W L, S-BAND PUSH-PULL POWER GaAs MES FET

PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NES1823P-140
140 W L, S-BAND PUSH-PULL POWER GaAs MES FET
DESCRIPTION
The NES1823P-140 is a 140 W push-pull type GaAs MES FET designed for high power transmitter applications
for PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 140 W of output power (CW) with
high linear gain, high efficiency and excellent distortion under the condition of 12 V operation. Its primary band is 1.8
to 2.3 GHz, however with different matching, 60 MHz or less of instantaneous bandwidth can be achieved anywhere
from 0.8 to 2.3 GHz. The device employs 0.9 µm Tungsten Silicide gates, via holes, plated heat sink, and silicon
dioxide passivation for superior performance, thermal characteristics, and reliability.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• Push-pull type N-channel GaAs MES FET
• VDS = 12.0 V operation
• High output power: Pout = 140 W TYP.
• High linear gain: GL = 11 dB TYP.
• High power added efficiency: ηadd = 43 % TYP. @ VDS = 12.0 V, IDset = 6.0 A (total), f = 2.20 GHz
ORDERING INFORMATION (PLAN)
Part Number
NES1823P-140
Package
T-92
Supplying Form
ESD protective envelope
Remark To order evaluation samples, consult your NEC sales representative.
Caution Please handle this device at static-free workstation, because this is an electrostatic
sensitive device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14751EJ1V0DS00 (1st edition)
Date Published May 2000 NS CP(K)
Printed in Japan
©
2000