NES1823P-100 Datasheet, PDF (1/20 Pages) NEC – 100W L-BAND PUSH-PULL POWER GaAs MESFET

PRELIMINARY DATA SHEET
N-CHANNEL GaAs MESFET
NES1823P-100
100W L-BAND PUSH-PULL POWER GaAs MESFET
DESCRIPTION
The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for
IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear
gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz with different maching.
The device employs Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide and nitride
passivation for superior performance, thermal characteristics, and reliability.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• Push-pull type N-channel GaAs MESFET
• High Output Power : 100 W TYP.
• High Linear Gain : 11.0 dB TYP.
• High Drain Efficiency : 50 % TYP. @VDS = 10 V, IDset = 6 A, f = 2.2 GHz
ORDERING INFORMATION (PLAN)
Part Number
Package
NES1823P-100
T-92
Supplying Form
ESD protective envelope
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NES1823P-100)
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
15
V
Gate to Source Voltage
VGSO
–7
V
Drain Current
ID
76
A
Gate Current
IG
440
mA
Total Power Dissipation
PT
220^Note
W
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
–65 to +175
°C
Note TC = 25°C
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
The information in this document is subject to change without notice.
Document No. P13839EJ1V0DS00 (1st edition)
Date Published November 1998 N CP(K)
Printed in Japan
©
1998