NES1821B-30 Datasheet, PDF (1/8 Pages) NEC – 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

PRELIM^DI^AN^TA^ARY^SHD^EA^ET^TA SHEET
GaAs MES FET
NES1821B-30
30W L-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
DESCRIPTION
The NES1821B-30 is power GaAs FET which provides
high output power and high gain in the 1.8-2.1 GHz
band.
Internal input matching circuits are designed to
optimize performance. The device has a 0.8 mm gate
length for increased linear gain. To reduce thermal
resistance, the device uses PHS (Plated Heat Sink)
technology.
The device incorporates WSi (tungsten silicide) gate
for high reliability and SiO2 glassivation for
surface stability.
PACKAGE DIMENSIONS (UNIT: mm)
24±0.3
20.4
1.0±0.1
SOURCE
GATE
17.4±0.3 8.0
2.4
R1.2
FEATURES
· _{High output power}
· _{High gain}
· _{High power added efficiency}
· _{Internally matched input}
· _{High reliability}
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDS
15
V
Gate to Source Voltage
VGS
–7
V
Gate to Drain Voltage
VGD
–18
V
Drain Current
ID
27
A
Gate Current
IG
180
mA
Total Power Dissipation
PT(*)
110
W
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg –65 to +175 °C
*TC = 25 °C
0.1
2.4
0.2 MAX
DRAIN
4.5 MAX
1.8
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
Document No. P12094EJ1V0DS00 (1st edition)
Date Published November 1996 N
Printed in Japan
©
1996