NEL2012F03-24 Datasheet, PDF (1/12 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER

PRELIMINARY DATA SHEET
SILICON POWER TRANSISTOR
NEL2012F03-24
NPN SILICON EPITAXIAL TRANSISTOR
L BAND POWER AMPLIFIER
DESCRIPTION
The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/
PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of
reliability.
FEATURES
High Linear Power and Gain
Low Internal Modulation Distortion
High Reliability Gold Metalization
Emitter Ballasting
24 V Operation
APPLICATION
Digital Cellular : PCN/PCS etc.
Digital Cordless : PHS etc.
ORDERING INFORMATION
Part Number
NEL2012F03-24
Package Outline
F03
PACKAGE DIMENSIONS
(Unit: mm)
2.8 ± 0.2
2 × φ 3.3 ± 0.3
2
1
3
18.9 ± 0.3
14.2 ± 0.3
6.35 ± 0.4
PIN CONNECTIONS
1. EMITTER
2. BASE
3. COLLECTOR
The information in this document is subject to change without notice.
Document No. P11768EJ1V0DS00 (1st edition)
Date Published June 1997 N
Printed in Japan
©
1996