NE97833 Datasheet, PDF (1/5 Pages) NEC – PNP SILICON HIGH FREQUENCY TRANSISTOR

PNP SILICON HIGH _NE97833
FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT:
fT = 5.5 GHz TYP
• HIGH SPEED SWITCHING CHARACTERISTICS
• NPN COMPLIMENT AVAILABLE: NE02133
• HIGH INSERTION POWER GAIN:
|S21E|² = 10 dB at 1 GHz
DESCRIPTION
The NE97833 PNP silicon transistor is designed for
ultrahigh speed current mode switching applications and
microwave amplifiers up to 3.5 GHz. The NE97833 offers
excellent performance and reliability at low cost.
33 (SOT 23 STYLE)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
fT
PART NUMBER
EIAJ¹ REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Gain Bandwidth Product at VCE = -10 V, IC = -15 mA
NF
Noise Figure at VCE = -10 V, IC = -3 mA
|S21E|²
Insertion Power Gain at VCE = -10 V, IC = -15 mA, f = 1 GHz
hFE
Forward Current Gain Ratio at VCE = -10 V, IC = -15 mA
ICBO
Collector Cutoff Current at VCB = -10 V, IE = 0
IEBO
Emitter Cutoff Current at VBE = -2 V, IC = 0
CRE²
Feedback Capacitance at VCB = -10 V, IE = 0 mA, f = 1 MHz
PT
Total Power Dissipation
UNITS
GHz
dB
dB
µA
µA
pF
mW
NE97833
2SA1978
33
MIN
TYP
MAX
4.0
5.5
2.0
3.0
8.0
10.0
20
40
100
-0.1
-0.1
0.5
1.0
200
Notes:
1. Electronic Industrial Association of Japan.
2. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
California Eastern Laboratories