NE960R575_01 Datasheet, PDF (1/3 Pages) NEC – 0.5W X, Ku-BAND POWER GaAs FET

0.5W X, Ku-BAND POWER GaAs FET NE960R575
FEATURES
• HIGH OUTPUT POWER: 27.5 dBm TYP @ P1 dB
• HIGH LINEAR GAIN: 9.0 dB TYP @ 14.5 GHz
• HIGH EFFICIENCY: 30% TYP @ 14.5 GHz
• HIGH RELIABILITY
• CLASS A OPERATION
DESCRIPTION
The NE950R575 Power GaAs FET covers the 4 GHz to 18
GHz frequency range for commercial amplifiers and oscillator
applications.
The device incorporates WSi (tungsten silicide) gate and sili-
con dioxide glassivation. NEC's strigent quality assurance
and test procedures assure the highest reliability and perfor-
mance.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 75
φ
1.8
+0.15
-0.05
2 PLACES
GATE
SOURCE
0.5 ± 0.1
DRAIN
+0.06
0.1 _-0.02
2.7 TYP
7.0
9.8 MAX
2.7
2.3
3.0 MIN BOTH
LEADS
2.3
1.13
0.9 MAX
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
CHARACTERISTICS
GL
Linear Gain
P1dB
Output Power (1 dB)
POUT
Power Out at Fixed Input Power
ηADD
Power Added Efficiency
RTH
Thermal Resistance
IDSS
Saturated Drain Current
Vp
Pinch-off Voltage
BVGD
Gate to Drain Break Down Voltage
Note:
1. VDS = 9 V, IDSQ = 90 mA, f = 14.5 GHz.
UNITS
dB
dBm
dBm
%
°C/W
A
V
V
NE950R575
75
MIN
TYP
MAX
8.0
9.0
27.5
25.5
26.5
30
30
0.18
0.4
0.7
-2.5
-1.8
-0.5
15
TEST CONDITIONS
VDS = 9 V
IDS = 180 mA set
f = 14.5 GHz, Rg = 1KΩ
PIN = 19 dBm¹
POUT = P1dB1
Channel-to-Case
VDS = 1.5 V, VGS = 0 V
VDS = 2.5 V, IDS = 2 mA
IGD = 2 mA
California Eastern Laboratories