NE960R275_01 Datasheet, PDF (1/3 Pages) NEC – 0.2W X, Ku-BAND POWER GaAs MESFET

0.2W X, Ku-BAND POWER GaAs MESFET NE960R275
FEATURES
• HIGH OUTPUT POWER: 25.0 dBm TYP @ P1 dB
• HIGH LINEAR GAIN: 9.0 dB TYP @ 14.5 GHz
• HIGH EFFICIENCY: 35% TYP @ 14.5 GHz
• HIGH RELIABILITY
• CLASS A OPERATION
DESCRIPTION
The NE960R275 is a Power GaAs MESFET covering the 4
GHz to 18 GHz range and is designed for X and Ku Band
amplifiers and oscillator applications.
The device incorporates WSi (tungsten silicide) gate and sili-
con dioxide glassivation. NEC's strigent quality assurance and
test procedures assure the highest reliability and performance.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 75
φ
1.8
+0.15
-0.05
2 PLACES
GATE
SOURCE
0.5 ± 0.1
DRAIN
+0.06
0.1 _-0.02
2.7 TYP
7.0
9.8 MAX
2.7
2.3
3.0 MIN BOTH
LEADS
2.3
1.13
0.9 MAX
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
CHARACTERISTICS
GL
Linear Gain
P1dB
Output Power (1 dB)
POUT
Power Out at Fixed Input Power
ηADD
Power Added Efficiency
RTH
Thermal Resistance
IDSS
Saturated Drain Current
Vp
Pinch-off Voltage
BVGD
Gate to Drain Break Down Voltage
Note:
1. VDS = 9 V, IDSQ = 90 mA, f = 14.5 GHz.
UNITS
dB
dBm
dBm
%
°C/W
A
V
V
NE960R275
75
MIN
TYP
MAX
8.0
10.0
25.0
22.0
24.0
35
60
0.09
0.2
0.35
-2.5
-1.8
-0.5
15
TEST CONDITIONS
VDS = 9 V
IDSQ = 90 mA
f = 14.5 GHz, Rg = 1KΩ
PIN = 15 dBm¹
POUT = P1dB1
Channel to Case
VDS = 1.5 V, VGS = 0 V
VDS = 2.5 V, IDS = 1 mA
IGD = 1 mA
California Eastern Laboratories