NE944 Datasheet, PDF (1/8 Pages) NEC – NPN SILICON OSCILLATOR AND MIXER TRANSISTOR

NPN SILICON NE944
OSCILLATOR AND MIXER TRANSISTOR SERIES
FEATURES
• LOW COST
• HIGH GAIN BANDWIDTH PRODUCT:
fT = 2000 MHz TYP
• LOW COLLECTOR TO BASE TIME CONSTANT:
CC•r b'b = 5 ps TYP
• LOW FEEDBACK CAPACITANCE: CRE= 0.55 pF TYP
DESCRIPTION
The NE944 series of NPN silicon epitaxial bipolar transistors
is intended for use in general purpose UHF oscillator and
mixer applications. It is suitable for automotive keyless entry
and TV tuner designs.
The device features stable oscillation and small frequency
drift during changes in the supply voltage and over the
ambient temperature range.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
ICBO
hFE
VCE(sat)
fT
COB
CC•rb'b
CRE
RTH (J-C)
RTH (J-A)
PT
PART NUMBER
EIAJ¹ REGISTERED NUMBER
PACKAGE CODE
PARAMETERS AND CONDITIONS
Collector Cutoff Current, VCB = 12 V, IE = 0
DC Current Gain, VCE = 10 V, IC = 5.0 mA
Collector Saturation Voltage, IC = 10 mA, IB = 1.0 mA
Gain Bandwidth Product, VCE = 3 V, IE = 5 mA
Output Capacitance, VCB = 3 V, IE = 0 mA, f = 1.0 MHz
Collector to Base Time Constant, VCE = 3 V,
IE = -5.0 mA, f = 31.9 MHz
Feedback Capacitance, VCB = 10 V, IE = 0 mA, f = 1.0 MHz
Thermal Resistance, Junction to Case (infinite heat sink)
Thermal Resistance, Junction to Ambient (free air)
Power Dissipation
Note:
1. Electronic Industrial Association of Japan.
NE94430
2SC4184
30
NE94433
2SC3545
33
UNITS MIN TYP MAX MIN TYP MAX
µA
0.1
0.1
40 100 200 50 100 250
V
0.5
0.5
GHz 1.2 2.0
1.3 2.0
pF
0.7 1.2
ps
pF
°C/W
°C/W
mW
3.5 8.0
5.0
0.55 1.0
200
200
833
620
150
150
California Eastern Laboratories