NE9000 Datasheet, PDF (1/5 Pages) NEC – Ku-BAND MEDIUM POWER GaAs MESFET

Ku-BAND MEDIUM ^{NE9000 SERIES}
NE9001 SERIES
POWER GaAs MESFET NE9002 SERIES
FEATURES
• CLASS A OPERATION
• HIGH OUTPUT POWER
POUT = 26.5 dBm
G1dB = 7 dB
TYPICAL LINEAR GAIN vs. FREQUENCY
24
21
• HIGH POWER ADDED EFFICIENCY
DESCRIPTION
The NE9000, NE9001, and NE9002 are 0.5 micron recessed
gate medium power GaAs FETs for commercial and space
amplifier and oscillator applications to 20 GHz. Chip configu-
rations available are: the NE900000, a one cell die of 400 µm
gate width; the NE900100, a one cell die of 750 µm gate
width; and the NE900200, a two cell die of 1500 µm total gate
width. The series is available in chip form or a variety of
hermetic ceramic packages. The NE900000, NE900100,
and NE900200 are standard die without wrap-around source-
metallization, while the NE900000G, NE900100G, and
NE900200G have wrap-around source metallization. The
series is space qualified.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
18
NE9000
15
12
NE9001/9002
9
6
3
2.0
10.0
Frequency (GHz)
PART NUMBER
SYMBOLS
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
IDSS Saturated Drain Current at
VDS = 2.5 V, VGS = 0
VP Pinch-off Voltage at VDS = 2.5 V,
IDS = 2.5 mA
IDS = 5 mA
IDS = 10 mA
gm Transconductance at VDS = 2.5 V,
IDS = 50 mA
IDS = 90 mA
IDS = 180 mA
RTH (C-C)
PT
PTEST
P1dB
G1dB
ηADD
Thermal Resistance (Channel-to-Case)
Total Power Dissipation
Power Output at Test Point
PIN = 11 dBm, VDS = 8V, ID = 50mA,
f = 8 GHz
PIN = 12 dBm,VDS = 8V, ID = 50mA
f = 14.5 GHz
PIN = 15 dBm, VDS = 8V, ID = 90mA
f = 14.5 GHz
PIN = 19 dBm, VDS = 8 V, ID = 180 mA,
f = 14.5
Output Power at 1 dB Compression
Point,
VDS = 8 V, ID = 50 mA, f = 8 GHz
VDS = 8 V, ID = 50 mA, f = 14.5 GHz
VDS = 8 V, ID = 90 mA, f = 14.5 GHz
VDS = 8 V, ID = 180 mA, f = 14.5 GHz
Gain at 1 dB Compression Point
VDS = 8 V, ID = 50 mA, f = 8 GHz
VDS = 8 V, ID = 50 mA, f = 14.5 GHz
VDS = 8 V, ID = 90 mA, f = 14.5 GHz
VDS = 8 V, ID = 180 mA, f = 14.5 GHz
Power Added Efficiency
VDS = 8 V, at P1dB Conditions.
NE900089A
89A
UNITS MIN TYP MAX
mA 80 120 150
V -1.5 -3.5 -5
V
V
mS
mS
mS
°C/W
W
25
180
0.8
dBm 19.5 20.5
dBm
dBm
dBm
dBm
20.5
dBm
dBm
dBm
dB
9
dB
dB
dB
%
27
NE900000
NE900000G
NE900075
00 (CHIP), 75
MIN TYP MAX
80 120 150
-1.5 -3.5 -5
25
180
0.8
19.5 20.5
20
8
27
NE900100
NE900100G
NE900175
00 (CHIP), 75
MIN TYP MAX
150 225 300
-2 -3.5 -5
50
100
1.5
22 23
23
7
27
NE900200
NE900200G
NE900275
00 (CHIP), 75
MIN TYP MAX
300 450 600
-2 -3.5 -5
100
50
3
25.5 26.5
25
7
26
California Eastern Laboratories