NE894M13 Datasheet, PDF (1/8 Pages) NEC – NPN SILICON TRANSISTOR

NPN SILICON TRANSISTOR NE894M13
FEATURES
• NEW MINIATURE M13 PACKAGE:
– Small transistor outline
– 1.0 X 0.5 X 0.5 mm
– Low profile / 0.50 mm package height
– Flat lead style for better RF performance
• IDEAL FOR > 3 GHz OSCILLATORS
• LOW NOISE, HIGH GAIN
• LOW Cre
• UHSO 25 GHz PROCESS
DESCRIPTION
The NE894M13 transistor is designed for oscillator applica-
tions above 3 GHz. The NE894M13 features low voltage, low
current operation, low noise, and high gain. NEC's new low
profile/flat lead style "M13" package is ideal for today's portable
wireless applications.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M13
0.7±0.05
0.5^+ñ00..015
(Bottom View)
0.3
2
3
1
0.1
0.1
0.2
0.2
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ¹ REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
fT
Gain Bandwidth at VCE = 1 V, IC = 20 mA, f = 2 GHz
|S21E|²
Insertion Power Gain at VCE = 1 V, IC = 20 mA, f = 2 GHz
|NF
Noise Figure at VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = ZOPT
Cre
Reverse Transfer Capacitance³ at VCB = 0.5 V, IE = 0 mA, f = 1 MHz
ICBO
Collector Cutoff Current at VCB = 5 V, IE = 0
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
hFE
DC Current Gain² at VCE = 1 V, IC = 5 mA
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Collector to base capacitance when the emitter is grounded
UNITS
GHz
dB
dB
pF
nA
nA
NE894M13
2SC5787
M13
MIN
TYP
MAX
17
20
–
11
13
–
–
1.4
2.5
–
0.22
0.30
–
–
100
–
–
100
50
–
100
California Eastern Laboratories