NE856M23 Datasheet, PDF (1/2 Pages) NEC – NPN SILICON TRANSISTOR

PRELIMINARY DATA SHEET
NPN SILICON TRANSISTOR NE856M23
FEATURES
• NEW MINIATURE M23 PACKAGE:
– World's smallest transistor package footprint —
leads are completely underneath package body
– Low profile/0.55 mm package height
– Ceramic substrate for better RF performance
• LOW NOISE FIGURE:
NF = 1.4 dB at 1 GHz
• HIGH COLLECTOR CURRENT:
IC MAX = 100 mA
DESCRIPTION
The NE856M23 transistor is designed for low cost amplifier
and oscillator applications. Low noise figure, high gain and high
current capability equate to wide dynamic range and excellent
linearity. NEC's new low profile/ceramic substrate style "M23"
package is ideal for today's portable wireless applications. The
NE856 is also available in chip, Micro-x, and eight different low
cost plastic surface mount package styles.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M23
0.5
1
0.25
0.4
2
3 0.25
0.6
0.15
0.2
0.15
BOTTOM VIEW
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
fT
NF
|S21E|²
hFE2
ICBO
IEBO
CRE3
PART NUMBER
EIAJ¹ REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz
Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz
Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz
Forward Current Gain at VCE = 3 V, IC = 7 mA
Collector Cutoff Current at VCB = 10 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz
UNITS
GHz
dB
dB
µA
µA
pF
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
NE856M23
2SC5649
M23
MIN
TYP
MAX
3
4.5
1.4
2.5
7
10.0
80
145
1
1
0.7
1.5
California Eastern Laboratories