NE856M02 Datasheet, PDF (1/7 Pages) NEC – NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

NPN EPITAXIAL SILICON
TRANSISTOR HIGH FREQUENCY ^NE856M02
LOW DISTORTION AMPLIFIER
FEATURES
• HIGH COLLECTOR CURRENT:
100 mA MAX
• NEW HIGH GAIN POWER MINI-MOLD PACKAGE
(SOT-89 TYPE)
• HIGH OUTPUT POWER AT 1 dB COMPRESSION:
22 dBm TYP at 1 GHz
• HIGH IP3:
32 dBm TYP at 1 GHz
DESCRIPTION
The NE856M02 is an NPN silicon epitaxial bipolar transistor
designed for medium power applications requiring high dy-
namic range and low intermodulation distortion. This device
offers excellent performance and reliability at low cost through
NEC's titanium, platinum, gold metallization system and direct
nitride passivation of the surface of the chip. The NE856M02
is an excellent choice for low noise amplifiers in the VHF to UHF
band and is suitable for CATV and other telecommunication
applications.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M02
BOTTOM VIEW
4.5±0.1
1.6±0.2
1.5±0.1
C
EB E
0.42
±0.06
0.42
±0.06
1.5 ^0.45
±0.06
3.0
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
0.25±0.02
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ¹ REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
ICBO
Collector Cutoff Current at VCB = 10 V, IE = 0
µA
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
µA
hFE2
DC Current Gain at VCE = 10 V, IC = 20 mA
50
fT
Gain Bandwidth Product at VCE = 10 V, IC = 20 mA
GHz
CRE3
Feed-back Capacitance at VCB = 10 V, IE = 0, f = 1.0 MHz pF
|S21E|² Insertion Power Gain at VCE = 10 V, IC = 20 mA, f = 1 GHz dB
NF1
Noise Figure 1 at VCE = 10 V, IC = 7 mA, f = 1 GHz
dB
NF2
Noise Figure 2 at VCE = 10 V, IC = 40 mA, f = 1 GHz
dB
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
NE856M02
2SC5336
M02
TYP
120
6.5
0.5
12.0
1.1
1.8
MAX
1.0
1.0
250
0.8
3.0
California Eastern Laboratories