NE856 Datasheet, PDF (1/25 Pages) NEC – NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

NEC's NPN SILICON HIGH NE856
FREQUENCY TRANSISTOR SERIES
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT:
fT = 7 GHz
• LOW NOISE FIGURE:
1.1 dB at 1 GHz
E
B
• HIGH COLLECTOR CURRENT: 100 mA
• HIGH RELIABILITY METALLIZATION
• LOW COST
00 (CHIP)
35 (MICRO-X)
P ^{L E A S E N O T E : part numbenrost DESCRIPTION}
T ^{h e f o l l o wdi nagt a s h e e t a r ed e s i g n . NEC's NE856 series of NPN epitaxial silicon transistors is}
designed for low cost amplifier and oscillator applications. Low
noise figures, high gain, and high current capability equate to
t ^{h i s f o r n e w wide dynamic range and excellent linearity. The NE856 series}
f ^{o r} offers excellent performance and reliability at low cost. This is
f ^{r o m e n d e d o f f i c e achieved by NEC's titanium/platinum/gold metallization sys-}
tem and their direct nitride passivated base surface process.
The NE856 series is available in chip form and a Micro-x
r ^{e c o m m c a l l s a l e s package for high frequency applications. It is also available in}
several low cost plastic package styles.
Pdleetaasiel _s : _NE85600
N ^{E 8 5 6 3 5 NOISE FIGURE AND GAIN}
vs. FREQUENCY
VCC = 10 V, IC 7 mA
32 (TO-92)
18 (SOT 343 STYLE)
34 (SOT 89 STYLE)
19 (3 PIN ULTRA SUPER
MINI MOLD)
4.0
20
MSG
3.5
GA
15
MAG
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
3.0
10
2.5
5
NFMIN
2.0
1.5
1.0
0.4 0.5
1.0
2
3
Frequency, f (GHz)
45
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
California Eastern Laboratories