NE85002 Datasheet, PDF (1/8 Pages) NEC – 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

PRELIMINARY DATA SHEET
GaAs MES FET
NE85002 SERIES
2 W C-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
DESCRIPTION
The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W
partially matched devices. Each packaged device has an input lumped element matching network.
NE8500200 is the six-cells recessed gate chip used in ‘95’ package.
The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
has a PHS. (Plated Heat Sink)
NEC’s strigent quality assurance and test procedures assure the highest reliability and performance.
FEATURES
• Class A operation
• High power output
• High reliability
100
240
PHYSICAL DIMENSIONS
NE8500200 (CHIP) (unit: µm)
110
100
640
100
90
SELECTION CHART
1800
100
PERFORMANCE SPECIFIED
PACKAGE CODE-95 (unit: mm)
PART NUMBER
Pout (**)
(dBm)
GL (**)
(dB)
USABLE
FREQUENCY
(GHz)
2.5 ±0.3 DIA
SOURCE
0.7 ±0.1
4.0 MIN.
GATE
NE8500200(*)
NE8500200-WB(*)
NE8500200-RG(*)
33.8 min
8.0 min
2.0 to 10
5.9 ±0.2
NE8500295-4
33.8 min
10.5 min
3.5 to 5.5
NE8500295-6
NE8500295-8
33.8 min
33.5 min
9.5 min
8.0 min
5.5 to 7.5
7.5 to 8.5
DRAIN
14.0 ±0.3
18.5 MAX.
* GB, RG indicate a type of containers for chips.
2.1 ±0.15 ^0.1
WB: black carrier, RG: ring,
** Specified at the condition at the last page.
0.2 MAX. ^{7.2 ±0.2}
4.5 MAX.
1.0
Document No. P10969EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
1996