NE76184A Datasheet, PDF (1/10 Pages) NEC – GENERAL PURPOSE FET N-CHANNEL GaAs MES FET

DATA SHEET
GaAs MES FET
NE76184A
GENERAL PURPOSE FET N-CHANNEL GaAs MES FET
DESCRIPTION
NE76184A is a N-channel GaAs MES FET housed in ce-
ramic package. The device is fabricated by ion implantation for
improved RF and DC performance reliability and uniformity. Its
excellent low noise and high associated gain make it suitable
for DBS, TVRO, GPS and another commercial systems.
FEATURES
• Low noise figure & High associated gain
NF = 0.8 dB TYP., Ga = 12 dB TYP. at f = 4 GHz
ORDERING INFORMATION
PART NUMBER
NE76184A-SL
NE76184A-T1
NE76184A-T1A
SUPPLYING
FORM
STICK
Tape & reel
LEAD LENGTH
L = 1.7 mm MIN.
L = 1.0 ± 0.2 mm
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDS
5.0
V
Gate to Source Voltage
VGSO
–5.0
V
Gate to Drain Voltage
VGDO
–6.0
V
Drain Current
ID
100
mA
Total Power Dissipation Ptot
300
mW
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg –65 to +150 ˚C
PACKAGE DIMENSIONS
(Unit: mm)
1.78 ±0.2
1
L
L
J
2
4
L
L
3
0.5 TYP.
1. Source
2. Drain
3. Source
4. Gate
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
Power Gain
SYMBOL
IGSO
IDSS
VGS (off)
gm
NF
Ga
Gs
MIN.
–
30
–0.5
20
–
–
–
TYP.
–
–
–
45
0.8
12
6
MAX.
10
100
–3.0
–
1.4
–
–
UNIT
µA
mA
V
mS
dB
dB
dB
TEST CONDITIONS
VGS = –5 V
VDS = 3 V, VGS = 0
VDS = 3 V, ID = 100 µA
VDS = 3 V, ID = 10 mA
VDD = 3 V
ID = 10 mA
f = 4 GHz
f = 12 GHz
IDSS rank is specified as follows. (K: 30 to 100 mA, N: 30 to 65 mA, M: 55 to 100 mA)
Document No. P10852EJ2V0DS00 (2nd edition)
(Previous No. TC-2303)
Data Published October 1995 P
Printed in Japan
©
1991